HAFNIUM TERT-BUTOXIDE

HAFNIUM TERT-BUTOXIDE Basic information

Product Name:	HAFNIUM TERT-BUTOXIDE
Synonyms:	HAFNIUM (IV) T-BUTOXIDE;HAFNIUM T-BUTOXIDE;HAFNIUM TERT-BUTOXIDE;HAFNIUM TETRA-T-BUTOXIDE;Hafnium(IV) t-butoxide (99.9%-Hf);Hafnium tert-butoxide, 99.9% (metals basis excluding Zr), Zr< 0.2%;Hafnium(IV) tert-butoxide;Hafnium(IV) tert-butoxide, 99.9% trace metals basis excluding Zr
CAS:	2172-02-3
MF:	C16H36HfO4
MW:	470.94
EINECS:
Product Categories:	metal alkoxide;Hafnium;Micro/Nanoelectronics;Solution Deposition Precursors
Mol File:	2172-02-3.mol

HAFNIUM TERT-BUTOXIDE Chemical Properties

Melting point	2℃
Boiling point	90 °C5 mm Hg(lit.)
density	1.166 g/mL at 25 °C(lit.)
refractive index	n20/D 1.424(lit.)
Fp	83 °F
solubility	Soluble in hydrocarbons, reacts with alcohols, ketones, and esters
form	Liquid
Specific Gravity	1.166
Hydrolytic Sensitivity	7: reacts slowly with moisture/water
Sensitive	Moisture Sensitive/Light Sensitive
Exposure limits	ACGIH: TWA 0.5 mg/m3 NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3
CAS DataBase Reference	2172-02-3(CAS DataBase Reference)

Safety Information

MSDS Information

Provider	Language
SigmaAldrich	English
ALFA	English

HAFNIUM TERT-BUTOXIDE Usage And Synthesis

Uses	Hafnium tert-butoxide [Hf(OtBu)₄] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO₂ and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices.
General Description	Atomic number of base material: 72 Hafnium

HAFNIUM TERT-BUTOXIDE Preparation Products And Raw materials

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