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| | GALLIUM NITRIDE Basic information |
| | GALLIUM NITRIDE Chemical Properties |
| Melting point | 800 °C (lit.) | | Boiling point | decomposes at >600℃ [KIR78] | | density | 6.1 | | refractive index | 2.70 (27℃) | | form | Powder | | color | Yellow | | Water Solubility | Slightly soluble in hot concentrated sulfuric acid and hot conc. sodium hydroxide. Insoluble in water and dilute acids. | | Crystal Structure | Hexagonal, Wurtzite (Zincite) Structure - Space Group P 63mc | | Sensitive | Moisture Sensitive | | Merck | 14,4351 | | Stability: | Stability Store under dry argon. Water and moisture sensitive. Incompatible with strong oxidizing agents. | | InChI | InChI=1S/Ga.N | | InChIKey | JMASRVWKEDWRBT-UHFFFAOYSA-N | | SMILES | N#[Ga] | | CAS DataBase Reference | 25617-97-4(CAS DataBase Reference) | | EPA Substance Registry System | Gallium nitride (GaN) (25617-97-4) |
| Safety Statements | 22-24/25 | | WGK Germany | 3 | | RTECS | LW9640000 | | F | 10-21 | | TSCA | Yes | | Toxicity | mouse,LDLo,intraperitoneal,5gm/kg (5000mg/kg),Gigiena Truda i Professional'nye Zabolevaniya. Labor Hygiene and Occupational Diseases. Vol. 9(6), Pg. 45, 1965. |
| | GALLIUM NITRIDE Usage And Synthesis |
| Chemical Properties | yellow powder | | Uses | Gallium nitride (GaN) is a wide band gap semiconducting material, which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs), and field effect transistors (FETs). It can also be used as a transition metal dopant for spintronics-based applications. | | Uses | Blue and UV light emitter with applications in semiconductor devices including: LEDs, laser diodes, lighting, displays, and data storage. |
| | GALLIUM NITRIDE Preparation Products And Raw materials |
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